Intel Corp. on Wednesday announced that transistors using a three-dimensional structure will be put into high-volume manufacturing. Santa Clara-based Intel (NASDAQ:INTC) called the development "a significant breakthrough in the evolution of the transistor, the microscopic building block of modern electronics. For the first time since the invention of silicon transistors over 50 years ago, transistors using a three-dimensional structure will be put into high-volume manufacturing." Intel said it will introduce the 3-D transistor design -- called Tri-Gate -- into high-volume manufacturing at the 22-nanometer node in an Intel chip codenamed "Ivy...